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IS34MW04G088 - 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • ONFI 1.0 compliant.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Pr.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS34MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.8V NAND FLASH MEMORY with 8b ECC FEATURES • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048 • ONFI 1.0 compliant • Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.) • Voltage and Temp. Ranges - Single 1.8V (1.7V to 1.