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IS34MW01G084 - 1Gb (x8/x16) 1.8V NAND FLASH MEMORY

Datasheet Summary

Description

The IS34/35MW1G084/164 are 128Mx8/64Mx16 bit with spare 4Mx8/2Mx16 bit capacity.

The devices are offered in 1.8V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 128Mb x8 /64Mb x16 - X8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit - Page Size: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 45ns (Max. ) - W.

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Datasheet preview – IS34MW01G084

Datasheet Details

Part number IS34MW01G084
Manufacturer ISSI
File Size 2.40 MB
Description 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
Datasheet download datasheet IS34MW01G084 Datasheet
Additional preview pages of the IS34MW01G084 datasheet.

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Full PDF Text Transcription

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IS34MW01G084/164 IS35MW01G084/164 1Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW01G084/164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 128Mb x8 /64Mb x16 - X8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit - Page Size: (1K + 32) Word - Block Erase: (64K + 2K) Word  Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance: - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.
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