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Preliminary Data Sheet PD
- 9.1115
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Short circuit rated -10µs @125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses TM
- HEXFRED soft ultrafast diodes
- Optimized for medium operating frequency ( 1 to 10kHz)
Short Circuit Rated Fast CoPack IGBT
VCES = 1200V VCE(sat) ≤ 3.5V
@VGE = 15V, IC = 9.0A
E n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a...