Datasheet Details
| Part number | IRGPH20M |
|---|---|
| Manufacturer | IRF |
| File Size | 240.36 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGPH20M Datasheet
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General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Short circuit rated - 10µs @ 125°C, V GE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 4.6V @VGE = 15V, I C = 4.5A n-channel.