IRG4PC50UD
IRG4PC50UD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features
- Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
Ultra Fast Co Pack IGBT
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A n-ch an nel
Benefits
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.24 ----6 (0.21)
Max.
0.64 0.83 -----40 ------
Units
°C/W g...
