• Part: IRG4PC50UD
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 213.93 KB
IRG4PC50UD Datasheet (PDF) Download
IRF
IRG4PC50UD

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits
  • Generation 4 IGBT's offer highest efficiencies available
  • IGBT's optimized for specific application conditions
  • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC