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IRG4PC50W - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

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Datasheet Details

Part number IRG4PC50W
Manufacturer IRF
File Size 157.33 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PC50W Datasheet

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Full PDF Text Transcription

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PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) max. = 2.
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