IRFSL3507 - HEXFET Power MOSFET

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IRF

Part number	IRFSL3507
Manufacturer	IRF
File Size	413.41 KB
Description	HEXFET Power MOSFET
Datasheet	IRFSL3507 Datasheet
Additional preview pages of the IRFSL3507 datasheet.

ccounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] EAS (AR) = PD (ave).

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Published: Aug 16, 2005 |