IRFSL41N15D
- 93804B
Applications l
High frequency DC-DC converters
HEXFET® Power MOSFET
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
VDSS RDS(on) max
Benefits l l l
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
150V
0.045:
41A
TO-220AB TO-220 Full Pak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C IDM PD @TA = 25°C PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Max.
41 29 164 3.1 200 48 1.3 0.32 ± 30 2.7 -55 to + 175
Units
A W c
Power Dissipation, D Pak Power Dissipation, TO-220 Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak
W/°C V V/ns °C
VGS dv/dt TJ TSTG
Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction...
