TTD1409B transistor equivalent, npn transistor.
*Designed for use high-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = 400V(Min)
*High DC Current Gain—
: hFE = 600(Min) @ IC= 2A
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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