TTD1415B - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 3A Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Complement to Type TTB1020B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose

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TTD1415B silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	TTD1415B
Manufacturer	Inchange Semiconductor
File Size	218.67 KB
Description	Silicon NPN Power Transistor
Datasheet	TTD1415B Datasheet

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isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.