TTD1415B transistor equivalent, silicon npn power transistor.
*Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= 3A
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 3A
*Complement to Type TTB1020B
*Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
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