Si2315BDS mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Dra.
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