Power Supply
- Secondary Synchronous Rectification
Power tools
Motor drive switch
Battery management
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGSS ID IDM PD Tch
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=
Features
TrenchFET® Power MOSFET.
175 °C Junction Temperature.
100 % Rg and UIS Tested.
Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
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Isc P-Channel MOSFET Transistor
·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Power Supply
- Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGSS ID IDM PD Tch
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=150℃）
TC=125℃
TA=25℃
TA=125℃
Drain Current-Single Pulsed(t=100μs)
Total Dissipation @TC=25℃ TC=70℃ TA=25℃ TA=70℃
Max. Operating Junction Temperature
±20
-37.1 -31 -9.2 -7.7
-40
136 95 8.3 5.
SUD50P10-43L Datasheet
