Full PDF Text Transcription for SUD50P04-08-GE3 (Reference)
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SUD50P04-08-GE3 SUD50P04-08-GE3 Datasheet www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A...
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Y VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -40 0.012 0.015 -50 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C a TC = 125
SUD50P04-08-GE3 Datasheet
