| Part number | S2000 |
|---|---|
| Datasheet | S2000-INCHANGE.pdf |
| File Size | 215.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A ICBO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
S2000 | Silicon NPN Transistor | Toshiba |
 |
S2000 | SILICON POWER TRANSISTOR | SavantIC |
|
S2000A | Silicon NPN Transistor | Toshiba |
|
S2000A | SILICON POWER TRANSISTOR | SavantIC |
 |
S2000AF | High voltage NPN Power transistor | ST Microelectronics |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| S2010L | Thyristor |
| S20SC4M | Schottky Barrier Rectifier |
