Datasheet Details
| Part number | S2000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.43 KB |
| Description | NPN Transistor |
| Download | S2000 Download (PDF) |
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| Part number | S2000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.43 KB |
| Description | NPN Transistor |
| Download | S2000 Download (PDF) |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 125 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ S2000 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A ICBO Collector Cutoff Current VCB= 1500V;
VBE= 0 hFE-1 DC Current Gain IC= 1A ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
S2000 | Silicon NPN Transistor | Toshiba |
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S2000 | SILICON POWER TRANSISTOR | SavantIC |
|
S2000A | Silicon NPN Transistor | Toshiba |
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S2000A | SILICON POWER TRANSISTOR | SavantIC |
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S2000AF | High voltage NPN Power transistor | ST Microelectronics |
| Part Number | Description |
|---|---|
| S2010L | Thyristor |
| S20SC4M | Schottky Barrier Rectifier |