MJE802T transistor equivalent, npn transistor.
*Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V
*DC Current Gain—
: hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A
*Complement to Type MJE702T
*Minimum Lot-to-Lot variations for robust device
performance and rel.
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