MJE802G transistors equivalent, plastic darlington complementary silicon power transistors.
* High DC Current Gain − hFE = 2000 (Typ) @ IC
= 2.0 Adc
* Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
* Ch.
Features
* High DC Current Gain − hFE = 2000 (Typ) @ IC
= 2.0 Adc
* Monolithic Construction with Built−in Base−.
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