Part MJE802G
Description Plastic Darlington Complementary Silicon Power Transistors
Category Transistor
Manufacturer onsemi
Size 125.95 KB
MJE802G Datasheet (PDF) Download
onsemi
MJE802G

Overview

  • High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage - Multiplication
  • Choice of Packages - MJE700 and MJE800 Series
  • These Devices are Pb-Free and are RoHS Compliant*
MJE802G datasheet preview

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