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JST41Z-1200BW - Thyristor

Description

With TO-3PN packaging Insulated package Can be operated in 3 quadrants Advanced technology to provide customers with high commutation performances Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications

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isc Thyristors JST41Z-1200BW DESCRIPTION ·With TO-3PN packaging ·Insulated package ·Can be operated in 3 quadrants ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) Repetitive peak reverse voltage Average on-state current Tc=75℃ ITSM Surge non-repetitive on-state current 50HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX 1200 1200 40 UNIT V V A 400 A 1 W -40~125 ℃ -40~150 ℃ ELECT
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