*Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot v.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Volt.

IXTP60N20X4

IXTP60N10T

IXTP62N15P

IXTP64N055T

IXTP64N10L2

IXTP6N100D2

IXTP6N50D2

IXTP6N50P

IXTP01N100D

IXTP02N50D

IXTP05N100

IXTP05N100M

IXTP08N100D2

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