IRFP260M
Overview
- Static drain-source on-resistance: RDS(on)≤40mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High Speed Power Switching
| Part | IRFP260M |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 242.75 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFP260MPbF | Infineon | IR MOSFET |
| IRFP260M | Infineon | IR MOSFET |
| IRFP260NPBF | International Rectifier | HEXFET Power MOSFET |
| IRFP260 | IXYS | Standard Power MOSFET |
| IRFP260 | Vishay | Power MOSFET |