IRFP260M
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Description
V(BR)DSS RDS(on) max. ID
IRFP260MPb F
IR MOSFET™
200V 0.04 50A
IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for mercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
G Gate
Base part number IRFP260MPb F
Package Type TO-247AD
Standard Pack
Form
Quantity
Tube
TO-247AD
D Drain
S...
