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IPP65R600C6 Datasheet, INCHANGE

IPP65R600C6 mosfet equivalent, n-channel mosfet.

IPP65R600C6 Avg. rating / M : 1.0 rating-12

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IPP65R600C6 Datasheet

Features and benefits


*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for ro.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous .

Image gallery

IPP65R600C6 Page 1 IPP65R600C6 Page 2

TAGS

IPP65R600C6
N-Channel
MOSFET
IPP65R600E6
IPP65R660CFD
IPP65R660CFDA
INCHANGE

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