IPP65R045C7 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤0.045Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for .
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*Provide all benefits of a fast switching super junction MOSFET
offering better efficiency,reduced gate charge,easy implementation and outstanding reliability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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Drain-Source Vo.
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