IPP60R600P7 datasheet, mosfet equivalent, INCHANGE

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 240.72KB)

Features and benefits

*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for ro.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description

*Combines the benefits of a fast switching SJ MOSFET with excellent ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM.

Image gallery