IPP60R600C6 datasheet, mosfet equivalent, INCHANGE

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datasheet Download (Size : 240.26KB)

Features and benefits

*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for ro.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description

*Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con.

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