IPP080N03L mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤8.0mΩ
*Enhancement mode:
Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA)
*Fast Switching Speed
*100% avalanche tested .
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Volta.
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