IPP040N06N3 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤3.7mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Volta.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 242.15KB)