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IPP040N06N3 - Power Transistor

Download the IPP040N06N3 datasheet PDF. This datasheet also covers the IPP040N06N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • for sync. rectification, drives and dc/dc SMPS.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • Avalanche rated.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP040N06N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPP040N06N3 N-Channel MOSFET INCHANGE
IPP040N06N3G Power-Transistor Infineon Technologies AG
IPP040N06N Power-Transistor Infineon Technologies
IPP040N06N N-Channel MOSFET INCHANGE
IPP041N04N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPP040N06N3G MOSFET OptiMOSª3Power-Transistor,60V Features •forsync.rectification,drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •Avalancherated •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4 mΩ ID 130 A TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP040N06N3 G Package PG-TO 220-3 Marking 040N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPP040N06N3G TableofContents Description . . . . . . . . . . . . .