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IPD60R650CE - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤0.65Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.9 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 82 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.52 62 UNIT ℃/W ℃/W isc website：www.iscsemi.