IPD60R600E6 - MOSFET

Datasheet Summary

Description

CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
JEDEC1) qualified, Pb-free plating, halogen free (excluding TO-252).

Infineon Technologies

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Datasheet Details

Part number	IPD60R600E6
Manufacturer	Infineon Technologies
File Size	1.19 MB
Description	MOSFET
Datasheet	IPD60R600E6 Datasheet
Additional preview pages of the IPD60R600E6 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R600E6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600V CoolMOS" E6 Power Transistor 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Published: Aug 1, 2011 |