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HUF75345S3ST - N-Channel MOSFET

Description

Drain Current: ID= 75A@ TC=25℃ Drain Source Voltage : VDSS= 55V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Designed for high current, high speed switching, switch mode power supplies.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor HUF75345S3ST ·DESCRIPTION ·Drain Current: ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 75 A PD Total Dissipation@TC=25℃ 325 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
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