isc Thyristors
INCHANGE Semiconductor
CLA50E1200HB
DESCRIPTION
·With TO-247 packaging
·Long-term stability
·Thyristor for line frequency
·Planar passivated chip
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching applications
·Line rectifying 50/60 Hz
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average forward current
IT(RMS)
ITSM
PG(AV)
RMS on-state current
Surge non-repetitive on-state current
( 1/2 cycle,sine wave )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
@Tc=150℃
50HZ
60HZ
MIN
1200
1200
50
79
550
595
0.5
-40~125
-40~150
UNIT
V
V
A
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM
IDRM Repetitive peak off-state current VDM=VDRM
Tj=25℃
Tj=125℃
VTM On-state voltage
ITM= 110A
IGT
Gate-trigger current
VD = 6V
VGT Gate-trigger voltage
VD = 6V
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
0.05
4
mA
1.85 V
1.6 mA
1.5
V
0.25 ℃/W
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