CLA50E1200TC
Thyristor
Symbol Definition
Conditions
V RSM/DSM
V RRM/DRM
IR/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt) cr
(dv/dt) cr
VGT
I GT
VGD
I GD
IL
IH
t gd
tq
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 50 A
IT = 100 A
IT = 50 A
IT = 100 A
average forward current
TC = 125°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150°C; f = 50 Hz
repetitive, IT = 150 A
tP = 200 µs; diG/dt =0 .3 A/µs;
IAG =0 .3 ; VD = ⅔ VDRM
non-repet., IT = 50 A
VD = ⅔ VDRM
T=VJ 150°C
R GK = ∞; method 1 (linear voltage rise)
VD= 6 V
TVJ = 25°C
T=VJ -40°C
VD= 6 V
TVJ = 25°C
T=VJ -40°C
VD = ⅔ VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25°C
IG = 0.3A; diG/dt =0 .3 A/µs
VD= 6 VRGK = ∞
T=VJ 25°C
VD = ½ VDRM
T=VJ 25°C
IGA = 0.3 ; diG/dt =0 .3 A/µs
VR = 100 V; IT =5 0 A; VD = ⅔ VDRM T=VJ 150°C
di/dt = 10 A/µs; dv/dt = 20 V/µs; tp = 200 µs
Ratings
min. typ. max. Unit
1300 V
1200 V
50 µA
4 mA
1.32 V
1.60 V
1.27 V
1.65 V
50 A
79 A
0.88 V
7.7 mΩ
0.25 K/W
0.15 K/W
500 W
650 A
700 A
555 A
595 A
2.12 kA²s
2.04 kA²s
1.54 kA²s
1.48 kA²s
25 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
1.5 V
1.6 V
50 mA
80 mA
0.2 V
3m A
125 mA
100 mA
2µ s
200 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b
