isc Thyristors
INCHANGE Semiconductor
CLA30E1200HB
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM
Repetitive peak off-state current VDM=VDRM
Tj=25℃
Tj=125℃
VTM On-state voltage
ITM= 30A;tp=380μs
IGT
Gate-trigger current
VD = 6V
VGT Gate-trigger voltage
VD = 6V
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
0.01
2
mA
1.28 V
28 mA
1.3
V
0.5 ℃/W
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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