BUY79 transistor equivalent, npn transistor.
*Designed for use as high-speed power switches at high
voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 350V(Min.)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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