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BUK444-600B - N-Channel MOSFET

Download the BUK444-600B datasheet PDF. This datasheet also covers the BUK444-600A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance applic

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Note: The manufacturer provides a single datasheet file (BUK444-600A-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BUK444-600A N-Channel MOSFET
BUK444-200A N-Channel MOSFET
BUK444-200B N-Channel MOSFET
BUK444-800A N-Channel MOSFET
BUK444-800B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-600A ID Current-continuous @ TC=25℃ BUK444-600B VALUE UNIT 600 V ±30 V 1.6 A 1.5 Ptot Total Dissipation@TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website：www.iscsemi.