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BUK444-200B - PowerMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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Full PDF Text Transcription for BUK444-200B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK444-200B. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic f...

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-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.

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