BDY39 transistor equivalent, npn transistor.
*Designed for use in high power AF output stages and in
stabilized power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
*Excellent Safe Operating Area
*DC Current Gain-
: hFE=25-100@IC = 4A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max)@ IC = 4A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIO.
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