BD609 transistor equivalent, npn transistor.
*Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits. . ABSOLUTE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Complement to Type BD610
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in hig.
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