BD535 - NPN Transistor

Inchange Semiconductor

Description

DC Current Gain - : hFE = 40@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Complement to Type BD536 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching

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Datasheet Details

Part number	BD535
Manufacturer	Inchange Semiconductor
File Size	186.86 KB
Description	NPN Transistor
Datasheet	BD535 Datasheet

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isc Silicon NPN Power Transistor BD535 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD536 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.