BD535 transistor equivalent, npn transistor.
*Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA.
*DC Current Gain -
: hFE = 40@ IC= 0.5A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
*Complement to Type BD536
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desi.
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