BD355 transistor equivalent, pnp transistor.
*Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Low Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC = -2.0A
*Excellent Safe Operating Area
*Complement to Type BD354
*Minimum Lot-to-Lot variations for robust device
perf.
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