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6N80A - N-Channel MOSFET

Features

  • Drain Current ID= 6A@ TC=25℃.
  • Drain Source Voltage: VDSS= 800V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max).
  • Avalanche Energy Specified.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor 6N80A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage: VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION. ·Switch-mode and resonant-mode ·Power supplies ·Motor controls ·Uninterruptible Power Supplies (UPS) ·DC choppers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 180 W Tj Max.
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