Datasheet4U Logo Datasheet4U.com

6N80K5 - N-channel Power MOSFET

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB).
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected G(1) S(3) AM01476v1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
6N80 N-Channel Power MOSFET nELL
6N80 N-Channel MOSFET Transistor Inchange Semiconductor
6N80 N-CHANNEL POWER MOSFET UTC
6N80A N-Channel MOSFET INCHANGE
6N80C 800V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description

Full PDF Text Transcription

Click to expand full text
STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages Datasheet - production data TAB 3 1 D2PAK TAB TAB 3 1 DPAK TAB Features Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB) • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected G(1) S(3) AM01476v1 Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
Published: |