*Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VC.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SB761
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

2SD850

2SD851

2SD852

2SD855

2SD856A

2SD857

2SD858

2SD858A

2SD859

2SD800

2SD803

2SD807

2SD809

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts