Datasheet Details
| Part number | 2SD857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.34 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD857 Download (PDF) |
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| Part number | 2SD857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.34 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD857 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD857 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SD855 | NPN Transistor |
| 2SD856 | NPN Transistor |
| 2SD858 | Silicon NPN Power Transistor |
| 2SD859 | NPN Transistor |
| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
| 2SD811 | NPN Transistor |
| 2SD812 | NPN Transistor |
| 2SD817 | NPN Transistor |