2SD841 transistor equivalent, npn transistor.
*Designed for voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO.
*High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.)
*High Switching Speed
*Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
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