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SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES
. High Collector Current :
= 30A
. High DC Current Gain : hFE =1000(Min.),(vCE =5V, I C =20A)
. Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL vCB0 VCEO VEBO ic IB
^tg_
RATING 80 80
UNIT
30
150
150
°C
-65 ~ 150 °C
1. BASE 2. EMITTER
COLLECTOR (CASE)
TOSHIBA
TO— TC-3 , TB— 2— 21 Al A
Mounting kit No. AC73 Weight : 12.
2SD842 Datasheet
