2SD768 transistor equivalent, npn transistor.
*Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V.
*High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 3A
*Complement to Type 2SB727
*Minimum Lot-to-Lot.
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