2SD768
2SD768(K)
Silicon NPN Epitaxial
Application
Medium speed and power switching plementary pair with 2SB727(K)
Outline
TO-220AB
1 1. Base 2. Collector (Flange) 3. Emitter
2 3
3 kΩ (Typ)
200 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC
- Tj Tstg
Ratings 120 120 7 6 10 40 150
- 55 to +150
Unit V V V A A W °C °C
2SD768(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 7
- - 1000
- -
- -
- - Typ
- -
- -
- -
- -
- 1.0 3.0 Max
- - 100 10 20000 1.5 3 2 3.5
- - V V V V µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE=∞ VCE = 3 V, IC = 3 A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6A, IB = 60 m A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 I C = 3 A,...
