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2SD74 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) Good Linearity of hFE Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power am

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD74 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 60 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.
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