2SD732 transistor equivalent, silicon npn power transistor.
*Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
*High Current Capability
*Complement to Type 2SB696
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF pow.
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